HSQ_Electron Beam Resist

Negative Tone Electron Beam Resists_New Formulation!

HSQ Resist is a high resolution negative tone resist. Due to its Si base, it’s used in many applications that require high etch resistance. We supply HSQ pre-mixed or in kit form.

EM Resist provides HSQ resist in both liquid and powder form. A high resolution negative tone electron beam resist with excellent etch properties.

H-SiOx (HSQ) is a high purity, silsesquioxane-based semiconductor grade polymer applicable as a negative tone resist for electron beam patterns, EUV, nanoimprint lithography and Step and Flash Imprint Lithography (SFIL). It is readily soluble in non-polar organic solvents like methyl isobutylketone (MIBK), methyl siloxane and toluene for thin-film fabrication. Depending on the film thickness, a dense pattern with sub-10 nm half-pitch can be achieved.

Our new formulation has been shown to have excellent line edge roughness and great stability. It can also be used for planarization purposes, similar to FOx.

HSQ provided by EM Resist will replace any current product you might already use, like-for-like. If you would like to discuss about moving over to EM Resist for your HSQ requirements, please contact us.

Both solution and powder kits can be shipped internationally.