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SML_Electron Beam Resist
SML Resist
SML electron beam resist is supplied in a range of thicknesses from 50nm up to 2μm in volumes starting at only 50mL.
We also provide industry standard PMMA Resist.
The high performance SML electron beam resist is a novel polymer that has been specifically designed to answer the demands of the EBL community. It can be simultaneously patterned into high resolution and high aspect ratio patterns, even at low acceleration voltages and without the aid of proximity effect correction.
SML resist has been specifically designed to fit in with a standard PMMA process. No change in chemistry or process training is required.
Product Range – Thicknesses
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- SML50 : 40nm – 100nm
- SML100 : 90nm – 210nm
- SML300 : 250nm – 600nm
- SML600 : 575nm – 1300nm
- SML1000 : 990nm – 2000nm
- SML2000 : 1800nm – 5000nm
Specifications
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- Very high resolution: < 10nm
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- > 10:1 @ 30 kV
- >50:1 @ 100 kVVery high aspect ratio:
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- Thickness: 50 nm – 2000 nm
- Superior LER/LWR
- Very straight sidewalls
- Excellent surface adhesion (HMDS not required)
- Excellent etch resistance
SML was designed to be as close to PMMA as possible in terms of processing. This allows users to seamlessly change between PMMA and SML resists during their processes without needing additional equipment or consumables.
Below are our suggested processing conditions for SML Series Resist:
- Casing solvent: Anisole
- Pre-bake: 180°C for 2 minutes
- Exposure: 200-500 μC/cm2 @ 30kV
- Developer: MIBK:IPA (1:3) for 30s. All other PMMA developers will also work with SML resist.
- Stopper: IPA for 15s
- Remover: Acetone
The shelf life of the resist is 12 months. Store at room temperature away from direct sunlight.
Find more information here.Â
Category: Electron Beam & Photo Resist
Tags: EBL, electron beam, Photo resist, semiconductor, SML