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SU-8_Photo Resist
Category: Electron Beam & Photo Resist
Tags: EBL, Lithography, Photo resist, semiconductor, SU8
Description
SU-8 (GMXX Series) Photoresist
EM Resist offers a range of classic SU-8 photoresist products ideal for semiconductor applications. Our products are available under various forms and in a range of thicknesses.
Below is a table of our GM10XX products. If you have any specific requirements, please contact us for more information.
Product | Film Thickness Range | Coating Options |
---|---|---|
GM1010 | < 0.2 μm | Spray Coat |
GM1020 | 0.2 – 0.5 μm | Spin, Spray, Inkjet |
GM1030 | 0.5 – 1.2 μm | Spin, Spray, Inkjet |
GM1040 | 0.9 – 3.2 μm | Spin, Spray, Inkjet |
GM1050 | 3 – 8 μm | Spin, Inkjet |
GM1060 | 2 – 27 μm | Spin, Inkjet |
GM1070 | 15 – 200 μm | Spin, Inkjet |
GM1075 | 100 – 400 μm |
A typical SU-8 process consists of the following steps:
- Substrate preparation
- Spin coating
- Relaxation time to improve the surface uniformity
- Soft-bake
- Exposure to initiate cross-linking
- Post exposure bake
- Development
- Rinse & Dry
- Optional hard bake
For individual processing conditions for each product, please contact us for the relevant datasheets.