SPTS Omega® with Rapier™/DSi-v Module

Plasma Etch Systems for Silicon

The SPTS Omega^® Rapier™ and DSi-v process modules offer high rate silicon etching for a variety of applications. Deep reactive ion etching (DRIE) of silicon uses the Bosch Process, which switches the plasma chemistry repeatedly between etch (SF₆) and passivation(C₄F₈) steps, to create anisotropic etching of trenches or holes into silicon. With an installed base of >1500 DRIE process modules, KLA has decades of expertise in deep silicon etching for MEMS and other applications. The SPTS Rapier™ offers a dual plasma source design with independently controlled primary and secondary decoupled plasma zones, with independent dual gas inlets. This results in a highly concentrated and uniform distribution of radicals, resulting in high etch rates, excellent cross-wafer uniformity and control of CD, profile and feature tilt. This performance can be realized on wafers up to 300mm diameter. Inherent multi-mode flexibility also allows complementary oxide etching within the same hardware. The SPTS DSi-v module, offers excellent deep silicon etch performance for high load applications. The DSi-v is especially suited to large cavity etches for applications such as silicon microphones or pressure sensors. The Rapier™ and DSi-v are both compatible with the Omega^® LPX, c2L or fxP wafer handling platforms, or integrated with different SPTS etch and deposition modules on a Versalis™ cluster platform.